Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 6017-6022

  Zhang, C H ^a,b   Donnelly, S E ^a   Vishnyakov, V M ^a   Evans, J H ^a,c  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b INSTITUTE OF MODERN PHYSICS   (China)

^c NONE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HELIUM; ION IMPLANTATION; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

HELIUM IMPLANTATION; SELF DIFFUSION;

SILICON CARBIDE;

EID: 0242413031     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1611630     Document Type: Article

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