Micro-Raman spectroscopy of Si-, C-, Mg-and Be-implanted GaN layers

Journal of Raman Spectroscopy

Volumn 35, Issue 1, 2004, Pages 73-77

  Wang, L S ^a   Tripathy, S ^a   Sun, W H ^a   Chua, S J ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

GaN epilayer; Ion implantation; Raman vibrational modes

Indexed keywords

ALUMINUM COMPOUNDS; BORON COMPOUNDS; III-V SEMICONDUCTORS; ION IMPLANTATION; MAGNESIUM COMPOUNDS; PHONONS; SILICON COMPOUNDS;

GAN EPILAYERS; GAN LAYERS; IONS IMPLANTATION; LOCAL VIBRATIONAL MODE; MICRO RAMAN SPECTROSCOPY; PHONON BRANCHES; RAMAN BANDS; RAMAN STUDIES; RAMAN VIBRATIONAL MODE; VIBRATIONAL MODES;

GALLIUM NITRIDE;

BERYLLIUM; CARBON; GALLIUM; MAGNESIUM; SILICON;

ACOUSTICS; ARTICLE; DISPERSION; IMPLANT; PHONON; RAMAN SPECTROMETRY; VIBRATION;

EID: 1642569254     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/jrs.1108     Document Type: Article

References (20)

1. Nakamura S, Fasol G. The Blue Laser Diode-Gallium-Nitride Based Light Emitter and Laser. Springer: New York, 1997.
2. Pankove JI, Hutchby JA. J. Appl. Phys. 1976; 47: 5387.
3. Pankove JI, Hutchby JA. Appl. Phys. Lett. 1974; 24: 281.
4. Eiting CJ, Grudoski PA, Dupuis RD, Hsia H, Tang Z, Becher D, Kuo H, Stillman GE, Feng M. Appl. Phys. Lett. 1998; 73: 3875.
5. Zolper JC, J. Cryst. Growth 1997; 178: 157; Zolper JC, Tan HH, Williams JS, Zou J, Cockayne DJH, Pearton SJ, Crawford, MH, Karlicek RF Jr. Appl. Phys. Lett. 1997; 70: 2729.
6. Zolper JC, J. Cryst. Growth 1997; 178: 157; Zolper JC, Tan HH, Williams JS, Zou J, Cockayne DJH, Pearton SJ, Crawford, MH, Karlicek RF Jr. Appl. Phys. Lett. 1997; 70: 2729.
7. Limmer W, Ritter W, Sauer R, Mensching B, Liu C, Rauschenbach B. Appl. Phys. Lett. 1998; 72: 2589.
8. Seager CH, Myers SM, Petersen GA, Han J, Headley T. J. Appl. Phys. 1999; 85: 2568.
9. Duan JQ, Zhang BR, Zhang YX, Wang LP, Qin GG, Zhang GY, Tong YZ, Jin SX, Yang ZJ, Zhang X, Xu ZH. J. Appl. Phys. 1997; 82: 5745.
10. Siegle H, Kaczmarczyk G, Filippidis L, Litvinchuk AP, Hoffmann A, Thomsen C. Phys. Rev. B. 1997; 55: 7000.
11. Kuball M. Surf. Interface Anal. 2001; 31: 987; Feng ZC. Opt. Eng. 2002; 41: 2022.
12. Kuball M. Surf. Interface Anal. 2001; 31: 987; Feng ZC. Opt. Eng. 2002; 41: 2022.
13. Arguello CA, Rousseau DL, Porto SPS. Phys. Rev. 1969; 181: 1351.
14. Ramsteiner M, Menninger J, Brandt O, Yang H, Ploog KH. Appl. Phys. Lett. 1996; 69: 1276.
15. Siegle H, Kaschner A, Hoffmann A, Broser I, Thomsen C, Einfeldt S, Hommel D. Phys. Rev. B. 1998; 58: 13 619.
16. Kaschner A, Siegle H, Kaczmarczyk G, Straßburg M, Hoffmann A, Thomsen C, Birkle U, Einfeldt S, Hommel D. Appl. Phys. Lett. 1999; 74: 3281.
17. Kaczmarczyk G, Kaschner A, Hoffmann A, Thomsen C. Phys. Rev. B. 1998; 61: 5353.
18. Sauncy T, Holtz M, Zallen R. Phys. Rev. B. 1994; 50: 10 702.
19. Aleshchenko YA, Vodopyanov LK, Omeljanovsky EM, Pakhomov AV, Polyakov AY. Solid State Commun. 1989; 70: 123.
20. Schreutelkamp RJ, Custer JS, Liefting JR, Lu WX, Saris FW. Mater. Sci. Rep. 1991; 6: 275.