Multiscale thermal analysis for nanometer-scale integrated circuits

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 28, Issue 6, 2009, Pages 860-873

  Hassan, Zyad ^a   Allec, Nicholas ^b   Shang, Li ^a   Dick, Robert P ^c   Venkatraman, Vishak ^d   Yang, Ronggui ^a  

^a UCB 450   (United States)

^b UNIVERSITY OF WATERLOO   (Canada)

^c UNIVERSITY OF MICHIGAN   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

Integrated circuit (IC) thermal factors; Leakage power estimation; Nanoscale heat flow; Simulation

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; FABRICATION PROCESS; FOURIER; FULL-CHIP THERMAL ANALYSIS; HEAT FLOWS; HEAT TRANSPORT; IC DESIGNS; IC THERMAL ANALYSIS; INTEGRATED-CIRCUIT (IC) THERMAL FACTORS; LEAKAGE POWER; LEAKAGE-POWER ESTIMATION; LENGTH SCALE; MODELING METHOD; MODELING TECHNIQUE; MOLECULAR DYNAMICS METHODS; MULTI-RESOLUTION MODELING; MULTI-SCALE THERMAL ANALYSIS; NANO-METER-SCALE; NANOMETER-SCALE IC DESIGN; NANOSCALE HEAT FLOW; PERFORMANCE COSTS; PERSONAL USE; PHONON TRANSPORT; POWER DENSITIES; SIMULATION; TEMPERATURE DEPENDENT; TENTATIVE DESIGN; THERMAL ANALYSIS; THERMAL MODELING; THERMAL PHENOMENA; THERMAL PROFILES;

BOLTZMANN EQUATION; DESIGN; DYNAMICS; FLIP CHIP DEVICES; FLOW MEASURING INSTRUMENTS; FLOW SIMULATION; HEAT FLUX; INTEGRATED CIRCUITS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; THERMAL EFFECTS; THERMOANALYSIS;

INTEGRATED CIRCUIT LAYOUT;

EID: 66549085595     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2009.2017428     Document Type: Article

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