1.34m GaInNAs quantum well lasers with low room-temperature threshold current density

Electronics Letters

Volumn 42, Issue 16, 2006, Pages 923-924

  Hopkinson, M ^a   Jin, C Y ^a   Liu, H Y ^a   Navaretti, P ^a   Airey, R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTROMAGNETIC WAVE EMISSION; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; THRESHOLD VOLTAGE; WAVEGUIDES;

GAINNAS BARRIER LAYER; LOW TRANSPARENT CURRENT DENSITY; RIDGE WAVEGUIDE; THRESHOLD CURRENT DENSITY;

GALLIUM COMPOUNDS;

EID: 33746922006     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061325     Document Type: Article

References (10)

1. Kondow, M., Kitatani, T., Nakatsuka, S., Larson, M.C., Nakahara, K., Yazawa, Y., Okar, M., and Uomi, K.: ' GaInNAs: a novel material for long wavelength semiconductor lasers ', IEEE J. Sel. Top. Quantum Electron., 1997, 3, p. 719-730 10.1109/2944.640627 1077-260X
2. Wei, Y.Q., Sadeghi, M., Wang, S.M., Modh, P., and Larsson, A.: ' High performance 1.28m GaInNAs double quantum well lasers ', Electron. Lett., 2005, 41, p. 1328-1329 10.1049/el:20053210 0013-5194
3. Tansu, N., Yeh, J., and Mawst, J.L.: ' Low-threshold 1317nm InGaAsN quantum-well lasers with GaAsN barriers ', Appl. Phys. Lett., 2003, 83, p. 2512-2514 10.1063/1.1613998 0003-6951
4. Bank, S.R., Bae, H.P., Yuen, H.B., Wistey, M.A., Goddard, L.L., and Harris, J.S.: ' Room-temperature continuous-wave 1.55m GaInNAsSb laser on GaAs ', Electron. Lett., 2006, 42, p. 156-157 10.1049/el:20064022 0013-5194
5. Gollub, D., Fischer, M., and Forchel, A.: ' Toward high performance GaInAsN/GaAsN laser diodes in 1.5m region ', Electron. Lett., 2002, 38, p. 1183-1184 10.1049/el:20020812 0013-5194
6. Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., and Harris, J.S.: ' Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4m ', IEEE Photonics Technol. Lett., 2002, 14, p. 591-593 10.1109/68.998694 1041-1135
7. Li, W., Jouhti, T., Peng, C.S., Konttinen, J., Laukkanen, P., Pavelescu, E., Dumitrescu, M., and Pessa, M.: ' Low-threshold-current 1.32m GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy ', Appl. Phys. Lett., 2001, 79, p. 3386-3389 10.1063/1.1418455 0003-6951
8. Wang, X.D., Wang, S.M., Wei, Y.Q., Sadeghi, M., and Larsson, A.: ' High-quality 1.3m GaInNAs single quantum well lasers grown by MBE ', Electron. Lett., 2004, 40, p. 1338-1339 10.1049/el:20046557 0013-5194
9. Tansu, N., Kirsch, N.J., and Mawst, L.J.: ' Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers ', Appl. Phys. Lett., 2002, 81, p. 2523-2525 10.1063/1.1511290 0003-6951
10. Liu, H.Y., Hopkinson, M., Navaretti, P., Gutierrez, M., Ng, J.S., and David, J.P.R.: ' Improving the optical properties of 1.55m GaInNAs wells with GaInNAs barrier and spacer layer ', Appl. Phys. Lett., 2003, 83, p. 4951-4953 10.1063/1.1632027 0003-6951