Towards entire-carbon-nanotube circuits: The fabrication of single-walled-carbon-nanotube field-effect transistors with local multiwalled-carbon-nanotube interconnects

Advanced Materials

Volumn 21, Issue 13, 2009, Pages 1339-1343

  Liang, Xuelei ^a   Wang, Sheng ^a   Wei, Xianlong ^a   Ding, Li ^a   Zhu, Yuzhen ^a   Zhang, Zhiyong ^a   Chen, Qing ^a   Li, Yan ^b   Zhang, Jin ^b   Peng, Lian Mao ^a  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS CIRCUITS; CMOS INVERTERS; ELECTRON BEAM EVAPORATION; HEAVILY DOPED; LOCAL INTERCONNECTS; NANO MANIPULATOR; P-TYPE; SCANNING ELECTRON MICROSCOPE; SI SUBSTRATES; SINGLE-WALLED;

CARBON NANOTUBES; FABRICATION; FIELD EFFECT TRANSISTORS; MESFET DEVICES; PALLADIUM; SCANDIUM; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); VAPORS;

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 66149083188     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200802758     Document Type: Article

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