Atomic layer deposition of an HfO2 thin film using Hf(O-iPr)4

Thin Solid Films

Volumn 517, Issue 19, 2009, Pages 5695-5699

  Kim, Jeong Chan ^a   Heo, Jung Shik ^a   Cho, Yong Seok ^a   Moon, Sang Heup ^a  

^a Seoul National University   (South Korea)

Author keywords

Atomic layer deposition; Dielectric; Gate oxide; Hafnium oxide; Hafnium tetrakis iso propoxide

Indexed keywords

AMORPHOUS MATRICES; DEPOSITED FILMS; DIELECTRIC; EQUIVALENT OXIDE THICKNESS; GATE OXIDE; HAFNIUM DIOXIDE; HAFNIUM OXIDE; ISO-PROPOXIDE; MONOCLINIC CRYSTALS; SI(1 0 0); TEMPERATURE WINDOW; TEMPERATURE-PROGRAMMED DECOMPOSITION; TETRAKIS; THREE ORDERS OF MAGNITUDE;

ALUMINA; ATOMS; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; PYROLYSIS; SILICON COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS; THIN FILM DEVICES; THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 66049145203     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.115     Document Type: Article

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