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Journal of Photopolymer Science and Technology

Volumn 12, Issue 3, 1999, Pages 509-514

193nm lithography with novel highly transparent acid amplifier for chemically amplified resists

(6) Naito, Takuya a,b Ohfuji, Takeshi a Endo, Masayuki a Morimoto, Hiroaki a Arimitsu, Koji a Ichimura, Kunihiro a

a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

b Tokyo Institute of Technology ^* (Japan)

Author keywords

193 nm; Acid amplification; Acid amplified resist; ArF; Chemical amplified resist

Indexed keywords

EID: 0000348528 PISSN: 09149244 EISSN: None Source Type: Journal
DOI: 10.2494/photopolymer.12.509 Document Type: Article

Times cited : (17)

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