Synthesis and characteristics of a novel acid amplifier with a low absorbance at 193 nm

Journal of Photopolymer Science and Technology

Volumn 12, Issue 2, 1999, Pages 293-296

  Park, Sang Wook ^a   Arimitsu, Koji ^a   Ichimura, Kunihiro ^a   Ohfuji, Takeshi ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

193 nm resist; Acid amplifier; Acid proliferation reaction; Chemically amplified photoresist

Indexed keywords

EID: 0000322507     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.12.293     Document Type: Article

References (8)

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