Light emission from high-k dielectrics containing Ge nanocrystals

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 5070-5074

  Chang, Shu Tong ^a   Wang, W C ^a   Lin, W K ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

EL; Ge NC; High k; LED

Indexed keywords

BAND GAPS; COSPUTTERING; EL; ELECTRON HOLE; ENERGY DISPERSIVE X-RAY; GE CONTENT; GE NANOCRYSTALS; GE NC; HIGH-K; HIGH-K DIELECTRIC; INFRARED EMISSIONS; LED; METAL-INSULATOR-SEMICONDUCTOR; P-TYPE SI; PEAK WAVELENGTH; RADIATIVE RECOMBINATION; TEM; TUNNELING STRUCTURE; VISIBLE LIGHT;

DIELECTRIC MATERIALS; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; GERMANIUM; HAFNIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCRYSTALS; SWITCHING CIRCUITS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING GERMANIUM;

EID: 65649108163     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.158     Document Type: Article

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