Novel MIS Ge-Si quantum-dot infrared photodetectors

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 544-546

  Hsu, B C ^a   Lin, C H ^a   Kuo, P S ^a   Chang, S T ^b   Chen, P S ^c   Liu, C W ^a,c   Lu, J H ^a   Kuan, C H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; EMISSION SPECTROSCOPY; HIGH TEMPERATURE OPERATIONS; INFRARED DETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

GATE DIELECTRIC; OXYNITRIDE; QUANTUM DOT INFRARED PHOTODETECTORS; QUANTUM DOT STRUCTURES; WETTING LAYER STRUCTURES;

MIS DEVICES;

EID: 3943092601     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831969     Document Type: Article

References (13)

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