Modeling defect enhanced detection at 1550 nm in integrated silicon waveguide photodetectors

Journal of Lightwave Technology

Volumn 27, Issue 7, 2009, Pages 930-937

  Logan, Dylan F ^a   Jessop, Paul E ^a   Knights, Andrew P ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

Integrated optics; Ion implantation; P i n photodiodes; Photodetectors; Ridge waveguides; Semiconductor defects; Semiconductor device; Silicon on insulator (SOI) technology

Indexed keywords

1550 NM; CARRIER GENERATIONS; COMMERCIAL SOFTWARES; DEFECT LEVELS; DETECTION EFFICIENCIES; DEVICE DESIGNS; DIVACANCY; ENHANCED SENSITIVITIES; P-I-N PHOTODIODES; RESPONSIVITY; RIDGE WAVEGUIDES; SEMICONDUCTOR DEFECTS; SHOCKLEY READ HALLS; SILICON WAVEGUIDES; SILICON-ON-INSULATOR (SOI) TECHNOLOGY; SILICON-ON-INSULATOR WAVEGUIDES; SUBBAND GAPS;

DEFECTS; ELECTRIC CONDUCTIVITY; INTEGRATED OPTICS; ION BOMBARDMENT; ION IMPLANTATION; MICROSENSORS; OPTICAL MATERIALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; PHOTONICS; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON DETECTORS; WAVEGUIDES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 65649096197     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.927752     Document Type: Article

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