Effect of defects produced by MeV H and He ion implantation on characteristics of power silicon P-i-N diodes

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 135-138

  Hazdra, Pavel ^a   Brand, Klaus ^b   Vobecký, Jan ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING CAPABILITY; DOSE RANGE; DYNAMIC BEHAVIORS; HE ION IMPLANTATION; HIGH ENERGY; PIN DIODE; SHALLOW THERMAL DONORS;

DEFECTS; DIODES; HELIUM; SEMICONDUCTING SILICON COMPOUNDS;

ION IMPLANTATION;

EID: 78649887646     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924109     Document Type: Conference Paper

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