Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 3, 2009, Pages 577-583

  Sethi, Guneet ^a   Sunal, Paul ^b   Horn, Mark W ^a   Lanagan, Michael T ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b MEMS and Nanotechnology Exchange   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CRYSTALLINITY; CUBIC PHASIS; DEPOSITION PARAMETERS; ENERGY DISPERSIVE X-RAY SPECTROSCOPIES; ION ENERGIES; LOW PRESSURES; O2-PHASE; OXYGEN CONTENTS; OXYGEN DEFICIENTS; OXYGEN PRESSURES; PHYSICAL PARAMETERS; PULSED-DC; R F SPUTTERING; RADIO FREQUENCY SOURCES; REACTIVE MAGNETRON SPUTTERING; REACTIVE SPUTTER DEPOSITIONS; SOURCE FREQUENCIES; SPUTTERING GROWTHS; SPUTTERING PARAMETERS; SPUTTERING POWER; SPUTTERING PRESSURES; SUBSTRATE MATERIALS; SUBSTRATE TEMPERATURES; TETRAGONAL PHASE; X-RAY DIFFRACTIONS; XRD ANALYSIS; ZIRCONIUM OXIDES;

AMORPHOUS FILMS; CRYSTALLITE SIZE; CRYSTALLIZATION; FILM GROWTH; METALLIC GLASS; OXIDE FILMS; OXYGEN; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZIRCONIA; ZIRCONIUM;

SPUTTER DEPOSITION;

EID: 65549155442     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3119669     Document Type: Article

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