Crystallographic orientation dependence of radiation damage in Ar + implanted YSZ and MgO single crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 240, Issue 3, 2005, Pages 661-665

  Usov, I O ^a   Arendt, P N ^a   Groves, J R ^a   Stan, L ^a   Depaula, R F ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Damage anisotropy; Ion implantation; Magnesia; Zirconia

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ION BEAM ASSISTED DEPOSITION; ION IMPLANTATION; MAGNESIA; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION; ZIRCONIA;

DAMAGE ANISOTROPY; ION CHANNELING; ROOM TEMPERATURE;

ARGON;

EID: 27644573131     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.116     Document Type: Article

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