Analysis of mechanism of carbon removal from GaAs(1 0 0) surface by atomic hydrogen

Applied Surface Science

Volumn 254, Issue 24, 2008, Pages 8035-8040

  Tomkiewicz, P ^a   Winkler, A ^b   Krzywiecki, M ^a   Chasse, Th ^c   Szuber, J ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

Atomic hydrogen; Auger carbon pattern; Auger electron spectroscopy; Carbon species; Cleaning; Etching; GaAs; Mass spectrometry; Reaction products; X ray photoelectron spectroscopy

Indexed keywords

ATOMS; AUGERS; CARBON; CARBON FILMS; CLEANING; ETCHING; GALLIUM ARSENIDE; HYDROGEN; III-V SEMICONDUCTORS; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; PHOTOELECTRONS; PHOTONS; REACTION PRODUCTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANALYSIS OF MECHANISMS; ATOMIC HYDROGEN; AUGER ELECTRON SPECTROSCOPIES (AES); CARBON CONTAMINATION; CARBON SPECIES; GAAS; QUALITY ENHANCEMENT; SEMICONDUCTOR PROCESS;

AUGER ELECTRON SPECTROSCOPY;

EID: 52949102184     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.074     Document Type: Article

References (42)

1. K. Ploog, in: H.C. Freyhardt (Ed.), Crystals: Growth Properties and Applications, Springer, vol. 3, 1980, p. 73.
2. Ritchie S., Johnson S.R., Lavoie C., Mackenzie J.A., Tiedje T., and Streater R. Surf. Sci. 374 (1997) 418
3. Bernstein R.W., and Grepstad J.K. J. Vac. Sci. Technol. A 7 (1989) 581
4. Takamori A., Sugata S., Asakawa K., Miyauchi E., and Hashimoto H. Jpn. J. Appl. Phys. 26 (1987) 142
5. Goto S., Yamada M., and Nomura Y. Jpn. J. Appl. Phys. 34 (1995) 1180
6. Kanai C., Watanabe K., and Takakuwa Y. Phys. Rev. B 63 (2001) 235311
7. Winkler A. Appl. Phys. A57 (1998) 637
8. Schaefer J.A., Persch V., Stock S., Allinger T., and Goldman A. Europhys. Lett. 12 (1990) 563
9. Sugaya T., and Kawabe M. Jpn. J. Appl. Phys. 30 (1991) 402
10. Yamada M., Ide Y., and Tone K. Jpn. J. Appl. Phys. 31 (1992) 1157
11. Ide Y., and Yamada M. J. Vac. Sci. Technol. A12 (1994) 2172
12. Petit E.J., Houzay F., and Moison J.M. J. Vac. Sci. Technol. A10 (1992) 2172
13. Petit E.J., and Houzay F. J. Vac. Sci. Technol. B12 (1994) 547
14. Tomkiewicz P., Winkler A., and Szuber J. Appl. Surf. Sci. 252 (2006) 7647
15. Thorkov N.A., and Eremeev S.V. Semiconductors 33 (1999) 1100
16. Khatiri A., Krzyzewski T.J., McConville C.F., and Jones T.S. J. Cryst. Growth 282 (2005) 1
17. Khatiri A., Ripalda J.M., Krzyzewski T.J., Bell G.R., McConville C.F., and Jones T.S. Surf. Sci. Lett. 548 (2004) L1
18. Nagano H., Qin Z., Jia A., Kato Y., and Kobayashi M. J. Cryst. Growth 189 (1998) 265
19. Razek N., Otte K., Chasse Th., Hirsch D., Schindler A., and Rauschenbach B. J. Vac. Sci. Technol. A20 (2002) 1492
20. Wolan J.T., Mount C.K., and Hoflund G.B. J. Vac. Sci. Technol. A15 (1997) 2502
21. Allwood D.A., Carline R.T., Mason N.J., Pickering C., Tanner B.K., and Wlaker P.J. Thin Solid Films 364 (2000) 33
22. Bischler U., and Bertel E. J. Vac. Sci. Technol. A11 (1993) 458
23. Eibl C., Lackner G., and Winkler A. J. Vac. Sci. Technol. A16 (1998) 2979
24. Arabasz S., Bergignat E., Hollinger G., and Szuber J. Appl. Surf. Sci. 252 (2006) 7659
25. G.E. McGuire, Auger Electron Spectroscopy Reference Manual, New York, 1979.
26. Szuber J., Hoolinger G., and Bergignat E. Electron Technol. 31 (1998) 328
27. Hu C.Q., Zheng W.T., Zheng B., Li J.J., Jin Z.S., Bai X.M., Tian H.W., Jiang Q., Wang X.Y., Zhu J.Q., Meng S.H., He X.D., and Han J.C. Vacuum 77 (2004) 63
28. Jackson S.T., and Nuzzo R.G. Appl. Surf. Sci. 90 (1995) 195
29. Nakazawa H., Kawabata T., Kudo M., and Mashita M. Appl. Surf. Sci. 253 (2007) 4188
30. Huck H., Halac E.B., Oviedo C., Zampieri G., Pregliasco R.G., Alonso E.V., Reinoso M.E., and de Benyacar M.A.R. Appl. Surf. Sci. 141 (1998) 141
31. Shim J.Y., and Baik H.K. Diamond Relat. Mater. 10 (2001) 847
32. Constant L., Speisser C., and Normand F.L. Surf. Sci. 387 (1997) 28
33. Sanchez G., Wang W.L., Polo M.C., and Esteve P.J. Diamond Relat. Mater. 7 (1998) 200
34. Potapenko D.V., Horn J.M., and White M.G. J. Catal. 236 (2005) 346
35. Aßmuth A., Stimpel-Lindner T., Senftleben O., Bayerstadler A., Sulima T., Baumgärtner H., and Eisele I. Appl. Surf. Sci. 253 (2007) 8389
36. Zaze D.A., Toole E.P.O., Crawford R.I., Cui N., Andersion C.A., and Brown N.M.D. Surf. Interf. Anal. 26 (1998) 896
37. Huu L., Zaidi H., Paulmier D., and Voumard P. This Solid Films 290 (1996) 126
38. Y.M. Sun, J. Eklund, Q. Wang, D. Gay, J.M. White, Mater. Res. Soc. Symp. Proc. 750 (2003) Y8.46.2.
39. Król A., Szuber J., and Kaszczyszyn S. Vacuum 54 (1999) 205
40. Aydil E.S., Zhou Z.H., Gottscho R.A., and Chabal Y.J. J. Vac. Sci. Technol. B13 (1995) 258
41. Aydil E.S., Giapis K.P., Gottscho R.A., Donnelly V.M., and Yoon E. J. Vac. Sci. Technol. B11 (1993) 195
42. NIST mass spectrum database.