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Volumn 47, Issue SUPPL. 3, 2005, Pages

Characteristics of silicon nitride thin films prepared by using alternating exposures of SiH 2Cl 2 and NH 3

Author keywords

Atomic layer deposition; Deposition rate; Leakage current; NH 3; SiH 2Cl 2; Silicon nitride; X ray photoelectron spectroscopy

Indexed keywords


EID: 29344441527     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper
Times cited : (33)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.