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Volumn 47, Issue SUPPL. 3, 2005, Pages
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Characteristics of silicon nitride thin films prepared by using alternating exposures of SiH 2Cl 2 and NH 3
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Author keywords
Atomic layer deposition; Deposition rate; Leakage current; NH 3; SiH 2Cl 2; Silicon nitride; X ray photoelectron spectroscopy
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Indexed keywords
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EID: 29344441527
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: None Document Type: Conference Paper |
Times cited : (33)
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References (15)
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