Study of fluorine bombardment on the electrical properties of AlGaNGaN heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2607-2610

  Basu, Anirban ^a   Kumar, Vipan ^a   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE ION BOMBARDMENT; HETEROINTERFACE; POSTBOMBARDMENT ANNEALING;

ANNEALING; FLUORINE; HETEROJUNCTIONS; REACTIVE ION ETCHING; TWO DIMENSIONAL;

ION BOMBARDMENT;

EID: 37149028444     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2789444     Document Type: Article

References (3)

1. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, and J. W. Palmour, IEEE Electron Device Lett. 20, 161 (1999).
2. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, IEEE Electron Device Lett. 26, 435 (2005).
3. T. Palacios, C.-S. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 27, 428 (2006).