Strain dependence of hole Hall mobility in compressively strained Ge channel heterostructures

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 355-358

  Abe, Yasuhiro ^a   Sato, Hikaru ^a   Ozawa, Yusuke ^a   Sawano, Kentarou ^a,b   Nakagawa, Kiyokazu ^c   Shiraki, Yasuhiro ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

SiGe; Strained Ge

Indexed keywords

FILM GROWTH; GERMANIUM; HOLE MOBILITY; STRAIN; THICKNESS CONTROL; THIN FILMS;

BUFFER LAYER; HOLE HALL MOBILITY; SIGE; STRAINED GE;

HETEROJUNCTIONS;

EID: 33646111203     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.404     Document Type: Article

References (15)

1. Schäffer F. Semicond. Sci. Technol. 12 (1997) 1515
2. Sugii N., Hisamoto D., Washio K., Yokoyama N., and Kimura S. IEEE Electron. Device Lett. 49 (2002) 2237
3. Mizuno T., Sugiyama N., Tezuka T., Numata T., and Takagi S. IEEE Electron Device Lett. 50 (2003) 988
4. Irisawa T., Tokumitu S., Hattori T., Nakagawa K., Koh S., and Shiraki Y. Appl. Phys. Lett. 81 (2002) 847
5. von Känel H., Kummer M., Isella G., Müller E., and Hackbarth T. Appl. Phys. Lett. 80 (2002) 2992
6. Rössner B., Chrastina D., Isella G., and von Känel H. Appl. Phys. Lett. 84 (2004) 3058
7. Fitzgerald E.A., Xie Y.H., Green M.L., Brasen D., Kortan A.R., Michel J., Mii Y.J., and Weir B.E. Appl. Phys. Lett. 59 (1991) 811
8. Li J.H., Peng C.S., Wu Y., Dai D.Y., Zhou J.M., and Mai Z.H. Appl. Phys. Lett. 71 (1997) 3132
9. Luo Y.H., Wan J., Forrest R.L., Liu J.L., Goorsky M.S., and Wang K.L. J. Appl. Phys. 89 (2001) 8279
10. Sawano K., Kawaguchi K., Ueno T., Koh S., Nakagawa K., and Shiraki Y. Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. 29 (2002) 406
11. Sawano K., Kawaguchi K., Koh S., Hirose Y., Hattori T., Nakagawa K., and Shiraki Y. J. Electrochem. Soc. 150 (2003) G376
12. Tsang J.C., Mooney P.M., Dacol F., and Chu J.O. J. Appl. Phys. 75 (1994) 8098
13. Don Monroe, Xie Y.H., Fitzgerald E.A., Silverman P.J., and Watson G.P. J. Vac. Sci. Technol., B 11 (1993) 1731
14. Myronov M., Irisawa T., Mironov O.A., Koh S., Shiraki Y., Whall T.E., and Parker E.H.C. Appl. Phys. Lett. 80 (2002) 3117
15. Lee M.L., and Fitzgerald E.A. Appl. Phys. Lett. 83 (2003) 4202