GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer

IEEE Photonics Technology Letters

Volumn 21, Issue 8, 2009, Pages 504-506

  Weng, W Y ^a   Chang, S J ^a   Lai, W C ^a   Hsueh, T J ^a   Shei, S C ^b   Zeng, X F ^b   Wu, S L ^c   Hung, S C ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

^d SHIH CHIEN UNIVERSITY   (Taiwan)

Author keywords

Metal semiconductor metal (MSM); Photodetector; Semi insulating AlInN cap layer

Indexed keywords

DETECTIVITY; METAL-SEMICONDUCTOR-METAL (MSM); METAL-SEMICONDUCTOR-METAL PHOTODETECTORS; MG-DOPED; MSM PHOTODETECTORS; NOISE LEVELS; REJECTION RATIOS; SEMI-INSULATING ALINN CAP LAYER; SHARP TRANSITIONS; ULTRA VIOLETS;

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

PHOTODETECTORS;

EID: 65449126216     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2013968     Document Type: Article

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