A novel nano-architecture for ZnO thin films on «100» Si, GaAs and InP single crystal wafers by L-MBE as value in nano-robotic (machining) device fabrication efforts

Materials Science in Semiconductor Processing

Volumn 8, Issue 4, 2005, Pages 555-563

  Ramamoorthy, K ^a   Sanjeeviraja, C ^a   Jayachandran, M ^b   Sankaranarayanan, K ^a   Ganesan, V ^c   Misra, Pankaj ^d   Kukreja, L M ^d  

^a ALAGAPPA UNIVERSITY   (India)

^b CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^c UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

^d RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

Buffer layer on InP; Laser epitaxy; Semiconducting materials; Solar cells; Thin film structure and morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; INDIUM COMPOUNDS; MACHINING; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; SINGLE CRYSTALS; SOLAR CELLS; ZINC OXIDE;

BUFFER LAYER ON INP; LASER EPITAXY; SEMICONDUCTING MATERIALS; THIN FILM STRUCTURE AND MORPHOLOGY;

THIN FILMS;

EID: 18144422117     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.12.001     Document Type: Article

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