Electron counting in quantum dots

Surface Science Reports

Volumn 64, Issue 6, 2009, Pages 191-232

  Gustavsson, S ^a   Leturcq, R ^a   Studer, M ^a   Shorubalko, I ^a   Ihn, T ^a   Ensslin, K ^a   Driscoll, D C ^b   Gossard, A C ^b  

^a ETH ZURICH   (Switzerland)

^b University of California at Santa Barbara   (United States)

Author keywords

Aharonov Bohm effect; Coulomb blockade; Current fluctuations; Gallium arsenide; III V semiconductors; Photon electron interactions; Quantum point contacts; Semiconductor quantum dots

Indexed keywords

AHARONOV-BOHM EFFECT; CURRENT FLUCTUATIONS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; PHOTON-ELECTRON INTERACTIONS; QUANTUM POINT CONTACTS;

ABSORPTION; ARSENIC COMPOUNDS; ATOMS; CHARGE CARRIERS; CLUSTER ANALYSIS; COULOMB BLOCKADE; CRYSTALS; CURRENT VOLTAGE CHARACTERISTICS; DETECTORS; DISCRIMINANT ANALYSIS; ELECTRIC CONDUCTIVITY; ELECTRON CORRELATIONS; ELECTRON DENSITY MEASUREMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON TRANSITIONS; ELECTRON TUNNELING; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INTERFEROMETERS; INTERFEROMETRY; LIGHT; MAGNETIC FIELDS; MICROWAVES; MULTIPHOTON PROCESSES; OPTICAL WAVEGUIDES; PARTICLE BEAMS; PHOTONS; POINT CONTACTS; PRASEODYMIUM COMPOUNDS; PRINTERS (COMPUTER); QUANTUM CHEMISTRY; REGRESSION ANALYSIS; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 64749113476     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfrep.2009.02.001     Document Type: Review

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