Pulsed active loadpull measurements for the design of high-efficiency class-B RF power amplifiers with GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 4, 2009, Pages 881-889

  Doo, Seok Joo ^a,b   Roblin, Patrick ^a   Balasubramanian, Venkatesh ^a   Taylor, Richard ^c   Dandu, Krishnanshu ^c   Strahler, Jeffrey ^d   Jessen, Gregg H ^e   Teyssier, Jean Pierre ^f  

^a The Ohio State University   (United States)

^b Korea Army Academy at Young Cheon   (South Korea)

^c TEXAS INSTRUMENTS   (United States)

^d Andrew Corporation   (United States)

^e AIR FORCE RESEARCH LABORATORY   (United States)

^f Centre National de la Recherche Scientifique   (France)

Author keywords

Class B; GaN HEMTs; Large signal network analyzer (LSNA); Load pull; Memory effects; Pulsed IV; Pulsed RF

Indexed keywords

CLASS B; GAN HEMTS; LARGE-SIGNAL NETWORK ANALYZER (LSNA); LOAD-PULL; MEMORY EFFECTS; PULSED-IV; PULSED-RF;

CORUNDUM; ELECTRIC NETWORK ANALYSIS; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

GALLIUM NITRIDE;

EID: 64749098487     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2015111     Document Type: Conference Paper

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