-
2
-
-
0242493752
-
High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC
-
Nov.
-
G. H. Jessen, R. C. Fitch, J. K. Gillespie, G. D. Via, N. A. Moser, M. J. Yannuzzi, A. Crespo, J. S. Sewell, R. W. Dettmer, T. J. Jenkins, R. F. Davis, J. Yang, M. A. Khan, and S. C. Binari, "High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC," IEEE Electron Device Lett., vol. 24, no. 11, pp. 677-679, Nov. 2003.
-
(2003)
IEEE Electron Device Lett.
, vol.24
, Issue.11
, pp. 677-679
-
-
Jessen, G.H.1
Fitch, R.C.2
Gillespie, J.K.3
Via, G.D.4
Moser, N.A.5
Yannuzzi, M.J.6
Crespo, A.7
Sewell, J.S.8
Dettmer, R.W.9
Jenkins, T.J.10
Davis, R.F.11
Yang, J.12
Khan, M.A.13
Binari, S.C.14
-
3
-
-
0000220552
-
Trapping effects in GaN and SiC microwave FETs
-
Jun.
-
S. C. Binari, P. B. Klein, and T. E. Kazior, "Trapping effects in GaN and SiC microwave FETs," Proc. IEEE, vol. 90, no. 6, pp. 1048-1058, Jun. 2002.
-
(2002)
Proc. IEEE
, vol.90
, Issue.6
, pp. 1048-1058
-
-
Binari, S.C.1
Klein, P.B.2
Kazior, T.E.3
-
4
-
-
0035278804
-
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
-
Mar.
-
R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.3
, pp. 560-566
-
-
Vetury, R.1
Zhang, N.Q.2
Keller, S.3
Mishra, U.K.4
-
5
-
-
0035278799
-
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
-
Mar.
-
S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 465-471, Mar. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.3
, pp. 465-471
-
-
Binari, S.C.1
Ikossi, K.2
Roussos, J.A.3
Kruppa, W.4
Park, D.5
Dietrich, H.B.6
Koleske, D.D.7
Wickenden, A.E.8
Henry, R.L.9
-
6
-
-
33845519662
-
Analysis of DC-RF dispersion in AlGaN/GaN HFET's using pulsed I-V and time-domain waveform measurements
-
Long Beach, CA, Jun.
-
P. McGovern, J. Benedikt, P. J. Tasker, J. Powell, K. P. Hilton, J. L. Glasper, R. S. Balmer, T. Martin, and M. J. Uren, "Analysis of DC-RF dispersion in AlGaN/GaN HFET's using pulsed I-V and time-domain waveform measurements," in IEEE MTT-S Int. Dig., Long Beach, CA, Jun. 2005, pp. 1-4.
-
(2005)
IEEE MTT-S Int. Dig.
, pp. 1-4
-
-
McGovern, P.1
Benedikt, J.2
Tasker, P.J.3
Powell, J.4
Hilton, K.P.5
Glasper, J.L.6
Balmer, R.S.7
Martin, T.8
Uren, M.J.9
-
7
-
-
0030415379
-
Pulsed device measurements and applications
-
Dec.
-
J. Scott, J. G. Rathmell, A. Parker, and M. Sayed, "Pulsed device measurements and applications," IEEE Trans. Microw. Theory Tech., vol. 44, no. 12, pp. 2718-2723, Dec. 1996.
-
(1996)
IEEE Trans. Microw. Theory Tech.
, vol.44
, Issue.12
, pp. 2718-2723
-
-
Scott, J.1
Rathmell, J.G.2
Parker, A.3
Sayed, M.4
-
8
-
-
33745227386
-
Pulsed-IV pulsed-RF measurements using a large signal network analyzer
-
Long Beach, CA, Jun., [CD ROM]
-
S. J. Doo, P. Roblin, S. Lee, D. Chaillot, and M. V. Bossche, "Pulsed-IV pulsed-RF measurements using a large signal network analyzer," in ARFTG 65th Conf. Dig., Long Beach, CA, Jun. 2005, [CD ROM].
-
(2005)
ARFTG 65th Conf. Dig.
-
-
Doo, S.J.1
Roblin, P.2
Lee, S.3
Chaillot, D.4
Bossche, M.V.5
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