An active pulsed rf and pulsed dc load-pull system for the characterization of HBT power amplifiers used in coherent radar and communication systems

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 12, 2000, Pages 2625-2629

  Arnaud, Caroline ^a   Barataud, Denis ^b   Nebus, Jean Michel ^b   Teyssier, Jean Pierre ^b   Villotte, Jean Pierre ^b   Floriot, Didier ^a  

^a Research Institute of Microwave and Optical Communications   (France)

^b THALES   (France)

Author keywords

Electrothermal hbt model; Pulsed load pull measurements; Rf carrier phase shift

Indexed keywords

ELECTRIC LOADS; ERROR CORRECTION; HETEROJUNCTION BIPOLAR TRANSISTORS; RADAR SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; VECTORS; WIRELESS TELECOMMUNICATION SYSTEMS;

ACTIVE LOAD PULL SYSTEMS;

POWER AMPLIFIERS;

EID: 0034429263     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.899022     Document Type: Article

References (6)

1. H. Wang and M. Sayed, "W-band MMIC characterization in an isothermal environment," IEEE Microwave Guided Wave Lett., vol. 5, pp. 429-431, Dec. 1995.
2. J. P. Teyssier, J. P. Viaud, J. J. Raoux, and R. Quéré, "Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements," in IEEE MTT-S Int. Microwave Symp. Dig., Orlando, FL, May 1995, pp. 1033-1036.
3. D. Poulin, J. Mahon, and J.-P. Lanteri, "A high power on-wafer pulsed active load-pull system," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 40, Dec. 1992, pp. 2412-2417.
4. D. Barataud, C. Arnaud, B. Thibaud, M. Campovecchio, J. M. Nebus, and J. P. Villotte, "Measurements of time-domain voltage/current waveforms at RF and microwave frequencies, based on the use of a vector network analyzer, for the characterization of nonlinear devices: Application to high-efficiency power amplifiers and frequency-multipliers optimization," IEEE Trans. Instrum. Meas. (Special Issue), vol. 47, pp. 1259-1264, Oct. 1998.
5. S. Delage, S. Cassette, M. A. DiForte-Poisson, D. Floriot, E. Chartier, P. Etienne, P. Galtier, and J. P. Llandesman, "The correlation between material properties and HBT reliability," in GaAs Symp. Dig., Munich, Germany, 1999, pp. 246-248.
6. D. Siriex, O. Noblanc, D. Barataud, E. Chartier, C. Brylinski, and R. Quéré, "A CAD oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S parameters measurements," IEEE Trans. Electron Devices, vol. 46, pp. 580-584, Mar. 1999.