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Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film

(4) Chen, Wei Ren a Chang, Ting Chang b Yeh, Jui Lung a Chang, Chun Yen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; DATA STORAGE EQUIPMENT; LEAKAGE CURRENTS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NICKEL; NICKEL ALLOYS; NITRIDES; NONVOLATILE STORAGE; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR STORAGE; SILICON; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ANNEALING TREATMENTS; CHEMICAL-; ELECTRICAL CHARACTERISTICS; ENERGY-BAND DIAGRAMS; LEAKAGE CURRENT DENSITIES; MATERIAL ANALYSES; NITRIDE LAYERS; NON-VOLATILE; SI-NANOCRYSTAL; SILICIDE NANOCRYSTALS; STORAGE CAPACITIES; STORAGE PERFORMANCE; STORED CHARGE; TRANSMISSION ELECTRON MICROSCOPE; X-RAY DIFFRACTION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 52649169181 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2971189 Document Type: Article

Times cited : (5)

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