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Applied Physics A: Materials Science and Processing

Volumn 79, Issue 8, 2004, Pages 1959-1963

Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge

(5) Tong, X L a Zheng, Q G a Hu, S L a Qin, Y X a Ding, Z H a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

BAND-EDGE EMISSION; CRYSTALLINE QUALITY; GAS DISCHARGES; LASER INCIDENT ENERGY;

SEMICONDUCTING FILMS;

EID: 6444237562 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2106-8 Document Type: Article

Times cited : (31)

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