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Volumn 186, Issue 1-4, 2002, Pages 416-422
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Influence of the growth conditions of AlN and GaN films by reactive laser ablation
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Author keywords
Epitaxial growth; Laser induced plasma; Nitride film growth; Pulsed laser deposition; Spectroscopy
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Indexed keywords
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
LASER ABLATION;
SUBSTRATES;
SUPERCONDUCTING FILMS;
NITRIDE FILM GROWTH;
FILM GROWTH;
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EID: 0037185107
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(01)00707-3 Document Type: Conference Paper |
Times cited : (7)
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References (15)
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