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Volumn 186, Issue 1-4, 2002, Pages 416-422

Influence of the growth conditions of AlN and GaN films by reactive laser ablation

Author keywords

Epitaxial growth; Laser induced plasma; Nitride film growth; Pulsed laser deposition; Spectroscopy

Indexed keywords

EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; LASER ABLATION; SUBSTRATES; SUPERCONDUCTING FILMS;

EID: 0037185107     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00707-3     Document Type: Conference Paper
Times cited : (7)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.