Aluminum nitride thin films prepared by radical-assisted pulsed laser deposition

Vacuum

Volumn 59, Issue 2-3, 2000, Pages 649-656

  Ishihara, M ^a   Yamamoto, K ^a   Kokai, F ^b   Koga, Y ^a  

^a NATL INST OF MAT AND CHEM RES   (Japan)

^b INSTITUTE OF RESEARCH AND INNOVATION   (Japan)

Author keywords

AlN; Optical emission; PLD; Surface acoustic wave

Indexed keywords

EID: 0001036849     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(00)00329-8     Document Type: Article

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