Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 28, Issue 6, 2007, Pages 476-478

  Shiu, Jin Yu ^a,b   Huang, Jui Chien ^a,b   Desmaris, Vincent ^b   Chang, Chia Ta ^a   Lu, Chung Yu ^a   Kumakura, Kazuhide ^c   Makimoto, Toshiki ^c   Zirath, Herbert ^b   Rorsman, Niklas ^b   Chang, Edward Yi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

GaN; High electron mobility transistors (HEMTs); Implantation; Power density; Pulsed I V; Transient

Indexed keywords

ELECTRON GAS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON ON SAPPHIRE TECHNOLOGY;

OXYGEN ION IMLANTATION; POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34249822479     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.896904     Document Type: Article

References (20)

1. U. K. Mishra, P. Parikh, and Y. F. Wu, "AlGaN/GaN HEMTs - An overview of device operation and applications," Proc. IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002.
2. S. C. Binari, H. B. Dietrich, G. Kelner, L. B. Rowland, K. J. Doverspike, and D. K. Wickenden, "H, He and N implant isolation of n-type GaN," J. Appl. Phys., vol. 78, no. 5, pp. 3008-3011, Sep. 1995.
3. S. J. Pearton, C. B. Vartuli, J. C. Zolper, C. Yuan, and R. A. Stall, "Ion implantation doping and isolation of GaN," Appl. Phys. Lett. vol. 67, no. 10, pp. 1435-1437, Sep. 1995.
4. R. G. Wilson, C. B. Vartuli, C. R. Abernathy, S. J. Pearton, and J. M. Zavada, "Implantation and redistribution of dopants and isolation species in GaN and related compounds," Solid State Electron., vol. 38, no. 7, pp. 1435-1437, Jul. 1995.
5. J. C. Zolper, "Ion implantation in group III-nitride semiconductors: A tool for doping and defect studies," J. Cryst. Growth, vol. 178, no. 1/2, pp. 157-167, Jun. 1997.
6. + ion-implanted GaN," J. Raman Spectrosc., vol. 33, no. 4, pp. 283-286, Apr. 2002.
7. B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, and M. A. Poisson, "Raman characterization ofMg+ ion-implanted GaN," J. Phys., Condens. Matter, vol. 16, no. 2, pp. s49-s55, Jan. 2004.
8. T. Oishi, N. Miura, M. Suita, T. Nanjo, Y. Abe, T. Ozeki, H. Ishikawa, T. Egawa, and T. Jimbo, "Highly resistive GaN layers formed by ion implantation of Zn along the c-axis," J. Appl. Phys., vol. 94, no. 3, pp. 1662-1666, Aug. 2003.
9. 0.8As," Appl. Phys. Lett., vol. 62, no. 20, pp. 2536-2538, May 1993.
10. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, "GaN: Processing, defects, and devices," J. Appl. Phys., vol. 94, no. 3, pp. 1662-1666, Aug. 2003.
11. G. Dang, X. A. Cao, F. Ren, S. J. Pearton, J. Han, A. G. Baca, and R. J. Shul, "Oxygen implant isolation of n-GaN field-effect transistor structures," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 17, no. 5, pp. 2015-2018, Sep. 1999.
12. G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. Asif Khan, J.W. Yang, and Q. Chen, "P/He ion implant isolation technology for AlGaN/GaN HFETs," Electron. Lett., vol. 34, no. 2, pp. 193-195, Jan. 1998.
13. M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J. C. Pesant, Z. Bougrioua, M. Germain, J. C. De Jaeger, and C. Gaquiere, "First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology," Microw. Opt. Technol. Lett., vol. 46, no. 4, pp. 311-314, Aug. 2005.
14. J. W. Johnson, E. L. Piner, A. Vescan, R. Therrien, P. Rajagopal, J. C. Roberts, J. D. Brown, S. Singhal, and K. J. Linthicum, "12 W/mm AlGaN-GaN HFET on silicon substrates," IEEE Electron Device Lett. vol. 25, no. 7, pp. 459-461, Jul. 2004.
15. S. R. Bahl, M. H. Leary, and J. A. del Alamo, "Mesa-sidewall gate leakage in InAlAs/InGaAs heterostructure field effect transistors," IEEE Trans. Electron Devices, vol. 39, no. 9, pp. 2037-2043, Sep. 1992.
16. S. R. Bahl and J. A. del Alamo, "Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing," IEEE Electron Device Lett., vol. 13, no. 4, pp. 195-197, Apr. 1992.
17. V. Desmaris, M. Rudzinski, N. Rorsman, P. R. Larssen, H. Zirath, T. C. Rodle, and H. F. F. Jos, "Comparison of the dc and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe doped of unintentionally doped buffer layers," IEEE Trans. Electron Devices vol. 53, no. 9, pp. 2413-2417, Sep. 2006.
18. J. Kuzmík, P. Javorka, A. Alam, M. Marso, M. Heuken, and P. Kordôs, "Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using dc characterization method," IEEE Trans. Electron Devices, vol. 49, no. 8, pp. 1496-1498, Aug. 2002.
19. R. Chu, Y. Zhou, J. Liu, D. Wang, K. J. Chen, and K. M. Lau, "AlGaN- GaN double channel HEMTs," IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 438-446, Apr. 2005.
20. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the dc and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.