Some current research in femtosecond laser-induced surface ripple structures

International Journal of Surface Science and Engineering

Volumn 3, Issue 1-2, 2009, Pages 114-124

  Zheng, H Y ^a   Wang, X C ^a   Zhou, W ^b  

^a SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Femtosecond laser; GaN sapphire; InP; Laser fluence; Ripples; Surface morphology

Indexed keywords

FEMTOSECOND LASERS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; LASER PULSES; MORPHOLOGY; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE MORPHOLOGY; WIDE BAND GAP SEMICONDUCTORS;

COMPOUND SEMICONDUCTORS; FEMTOSECOND (FS) LASER; GAN/SAPPHIRE; LASER FLUENCES; NANO-MICRO STRUCTURE; PERIODIC SURFACE STRUCTURES; RIPPLES; SUB-WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 64249162038     PISSN: 1749785X     EISSN: 17497868     Source Type: Journal    
DOI: 10.1504/IJSURFSE.2009.024365     Document Type: Article

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