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Volumn 97, Issue 1, 2005, Pages

Structure formation on the surface of indium phosphide irradiated by femtosecond laser pulses

Author keywords

[No Author keywords available]

Indexed keywords

FEMTOSECOND LASER; FEMTOSECOND PULSES; LASER-INDUCED PERIODIC SURFACE STRUCTURES (LIPSS); PERIODIC LINES;

EID: 19944431254     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1827919     Document Type: Article
Times cited : (393)

References (29)
  • 7
    • 84888907241 scopus 로고    scopus 로고
    • Ph.D. thesis, BTU Cottbus, 1999.
    • J. Krüger, Ph.D. thesis, BTU Cottbus, 1999.
    • Krüger, J.1
  • 22
    • 0037462959 scopus 로고    scopus 로고
    • 0031-9007 10.1103/PhysRevLett.90.036801
    • S. Bergfeldt and W. Daum, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 90.036801 90, 036801 (2003). At the given fundamental wavelength of 800 nm, values between 400 and 800 pmV have been reported for the only six nonvanishing components χ (2) xyz of the second-order nonlinear susceptibility tensor of c-GaAs. B. Adolph and F. Bechstedt, Phys. Rev. B 57, 6519 (1999). These values are ~3-4 times higher than that of c-InP having the same crystal symmetry.
    • (2003) Phys. Rev. Lett. , vol.90 , pp. 036801
    • Bergfeldt, S.1    Daum, W.2
  • 23
    • 84991309677 scopus 로고    scopus 로고
    • At the given fundamental wavelength of 800 nm, values between 400 and 800 pmV have been reported for the only six nonvanishing components χ (2) xyz of the second-order nonlinear susceptibility tensor of c-GaAs.
    • S. Bergfeldt and W. Daum, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 90.036801 90, 036801 (2003). At the given fundamental wavelength of 800 nm, values between 400 and 800 pmV have been reported for the only six nonvanishing components χ (2) xyz of the second-order nonlinear susceptibility tensor of c-GaAs. B. Adolph and F. Bechstedt, Phys. Rev. B 57, 6519 (1999). These values are ~3-4 times higher than that of c-InP having the same crystal symmetry.
  • 24
    • 0001576888 scopus 로고    scopus 로고
    • S. Bergfeldt and W. Daum, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 90.036801 90, 036801 (2003). At the given fundamental wavelength of 800 nm, values between 400 and 800 pmV have been reported for the only six nonvanishing components χ (2) xyz of the second-order nonlinear susceptibility tensor of c-GaAs. B. Adolph and F. Bechstedt, Phys. Rev. B 57, 6519 (1999). These values are ~3-4 times higher than that of c-InP having the same crystal symmetry.
    • (1999) Phys. Rev. B , vol.57 , pp. 6519
    • Adolph, B.1    Bechstedt, F.2
  • 25
    • 84991309677 scopus 로고    scopus 로고
    • These values are ~3-4 times higher than that of c-InP having the same crystal symmetry.
    • S. Bergfeldt and W. Daum, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 90.036801 90, 036801 (2003). At the given fundamental wavelength of 800 nm, values between 400 and 800 pmV have been reported for the only six nonvanishing components χ (2) xyz of the second-order nonlinear susceptibility tensor of c-GaAs. B. Adolph and F. Bechstedt, Phys. Rev. B 57, 6519 (1999). These values are ~3-4 times higher than that of c-InP having the same crystal symmetry.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.