Al-free InP-based high electron mobility transistors: Design, fabrication and performance

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1159-1170

  Mesquida Kusters A ^a,b   Heime, K ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); METALLORGANIC VAPOR PHASE EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

BARRIER ENHANCEMENT LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031211772     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00021-X     Document Type: Article

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