Ab-initio modeling of point defects, impurities and diffusion in silicon

ECS Transactions

Volumn 16, Issue 6, 2009, Pages 89-96

  Windl, Wolfgang ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; DIMERS; DISSOCIATION; MONOMERS; POINT DEFECTS; SILICON;

AB INITIO MODELING; DIFFUSION IN SILICON; DIFFUSION PARAMETERS; DISSOCIATIVE MECHANISMS; FIRST-PRINCIPLES CALCULATION; PAIR DIFFUSION; TRANSITION STATE THEORIES;

DIFFUSION;

EID: 64149129807     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2980295     Document Type: Conference Paper

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