Preferential 〈111〉A pore propagation mechanism in n-InP anodized in KOH

ECS Transactions

Volumn 16, Issue 3, 2009, Pages 393-404

  Lynch, R ^a   O'Dwyer, C ^a   Quill, N ^a   Nakahara, S ^a   Newcomb, S B ^b   Buckley, D N ^a  

^a UNIVERSITY OF LIMERICK   (Ireland)

^b Glebe Scientific Ltd   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; POTASSIUM HYDROXIDE;

ANODIZATIONS; CRYSTALLOGRAPHIC DIRECTIONS; POROUS STRUCTURES; PROPAGATION MECHANISM; UNIFORM DIAMETER;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 63849173715     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982579     Document Type: Conference Paper

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