Structural and sensing properties of high-k PrTiO3sensing membranes for pH-ISFET applications

IEEE Transactions on Biomedical Engineering

Volumn 56, Issue 2, 2009, Pages 471-476

  Pan, Tung Ming ^a   Liao, Kao Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Annealed at 800 C; Drift rate; Electrolyte insulator semiconductor (EIS); Hysteresis; Interfacial SiO2 and silicate layer; PrTiO3; Sensing membrane; Sensitivity

Indexed keywords

DRIFT RATE; INTERFACIAL SIO2 AND SILICATE LAYER; PRTIO3; SENSING MEMBRANE; SENSITIVITY;

ANNEALING; APPLICATIONS; ATOMIC SPECTROSCOPY; BIOMEDICAL ENGINEERING; CRYSTAL ATOMIC STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROLYTES; FILM PREPARATION; HYSTERESIS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICATES; SURFACE ROUGHNESS;

X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROLYTE; PRASEODYMIUM CHLORIDE; PRASEODYMIUM OXIDE; SILICON; UNCLASSIFIED DRUG;

ARTICLE; ATOMIC FORCE MICROSCOPY; BIOENGINEERING; HYSTERESIS; INSULATOR ELEMENT; ION SENSITIVE FIELD EFFECT TRANSISTOR DEVICE; NONHUMAN; PH MEASUREMENT; RADIOFREQUENCY RADIATION; SEMICONDUCTOR; SENSING MEMBRANE; SENSITIVITY ANALYSIS; SENSOR; SURFACE PROPERTY; TEMPERATURE MEASUREMENT; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BIOSENSING TECHNIQUES; HYDROGEN-ION CONCENTRATION; MEMBRANES, ARTIFICIAL; MICROSCOPY, ATOMIC FORCE; PRASEODYMIUM; SENSITIVITY AND SPECIFICITY; SILICON DIOXIDE; SPECTROMETRY, X-RAY EMISSION; TEMPERATURE; TIME FACTORS; TITANIUM; X-RAY DIFFRACTION;

EID: 63849109930     PISSN: 00189294     EISSN: None     Source Type: Journal    
DOI: 10.1109/TBME.2008.2005908     Document Type: Article

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