Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Electrochemical and Solid-State Letters

Volumn 10, Issue 8, 2007, Pages

  Liu, Chuan Hsi ^a   Pan, Tung Ming ^b   Shu, Wei Hao ^b   Huang, Kuo Chan ^b  

^a MING CHUAN UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC FILMS; DOPING (ADDITIVES); ERBIUM COMPOUNDS; PERMITTIVITY; TITANIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL LAYERS; POSTTHERMAL ANNEALING;

THIN FILMS;

EID: 34250377358     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2742497     Document Type: Article

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