Analytical strain relaxation model for Si1-xGex /Si epitaxial layers

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Meńndez, Joś ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL RESULTS; ANALYTICAL SOLUTIONS; CRITICAL THICKNESS; DENSITY OF DISLOCATIONS; EFFECT OF DISLOCATIONS; EFFECTIVE STRESS; EXPERIMENTAL DATUM; MODEL PARAMETERS; RELAXATION MODELS; SI SUBSTRATES; STRAIN RELAXATION MODELS; SYSTEM OF DIFFERENTIAL EQUATIONS; TEMPERATURE DEPENDENCES;

EPITAXIAL LAYERS; GERMANIUM; GROWTH TEMPERATURE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRAIN CONTROL; STRAIN RELAXATION;

SILICON ALLOYS;

EID: 63749119951     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3093889     Document Type: Article

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