Simulation of the process of strain relaxation in Si1-xGex/Si(100) heterostructures

Physica Status Solidi (A) Applied Research

Volumn 164, Issue 2, 1997, Pages 767-778

  Fischer, G G ^a   Zaumseil, P ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

GOSLING MODEL; PLASTIC RELAXATION; STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 0031378004     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199712)164:2<767::AID-PSSA767>3.0.CO;2-W     Document Type: Article

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