Structural characterisation and stability of Si1-xGex/Si(1 0 0) heterostructures grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 749-755

  Re, M ^a   Scalese, S ^a   Mirabella, S ^a   Terrasi, A ^a   Priolo, F ^a   Rimini, E ^a   Berti, M ^b   Coati, A ^b   Drigo, A ^b   Carnera, A ^b   De Salvador, D ^b   Spinella, C ^c   La Mantia, A ^d  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c CNR IMETEM   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

A1. Line defects; A3. Low temperature growth; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Virtual substrates

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; POINT DEFECTS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SOLID SOURCE MOLECULAR BEAM EPITAXY;

HETEROJUNCTIONS;

EID: 0035398763     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00820-X     Document Type: Conference Paper

References (28)