Kinetics of strain relaxation in Si 1-x Ge x thin films on Si(100) substrates: Modeling and comparison with experiments

Applied Physics Letters

Volumn 88, Issue 2, 2006, Pages 1-3

  Kolluri, Kedarnath ^a   Zepeda Ruiz, Luis A ^b   Murthy, Cheruvu S ^c   Maroudas, Dimitrios ^a  

^a University of Massachusetts   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HE ION IMPLANTATION; STRAIN RELAXATION; THERMAL ANNEALING; THREADING DISLOCATION PROPAGATION;

ANNEALING; EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; HELIUM; PLASTIC DEFORMATION; SUBSTRATES; THERMOANALYSIS;

THIN FILMS;

EID: 30744452216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162683     Document Type: Article

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