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Volumn 36, Issue 4-6, 2004, Pages 455-463
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Energy and momentum relaxation of electrons in bulk and 2D GaN
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL LATTICES;
ELECTRIC FIELD EFFECTS;
ELECTRON MOBILITY;
ENERGY DISSIPATION;
ENERGY GAP;
EPITAXIAL GROWTH;
HETEROJUNCTIONS;
HIGH ELECTRON MOBILITY TRANSISTORS;
LIGHT SCATTERING;
PHONONS;
PHOTOLUMINESCENCE;
RELAXATION PROCESSES;
SEMICONDUCTOR DOPING;
DRIFT VELOCITY;
ENERGY RELAXATION;
MOMENTUM RELAXATION;
PIEZOELECTRIC POLARIZATION;
GALLIUM NITRIDE;
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EID: 9944254640
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1016/j.spmi.2004.09.009 Document Type: Article |
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Times cited : (7)
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References (13)
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