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Volumn 10, Issue 2, 2009, Pages 266-274

Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes

Author keywords

CsOH doped Alq3; IBOLED; Interfacial modification

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CATHODES; EFFICIENCY; INDIUM COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOELECTRON SPECTROSCOPY; STABILITY; THERMODYNAMIC STABILITY; TIN OXIDES;

EID: 63749103265     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.11.018     Document Type: Article
Times cited : (33)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.