Bulk and interface properties of molybdenum trioxide-doped hole transporting layer in organic light-emitting diodes

Organic Electronics

Volumn 9, Issue 3, 2008, Pages 333-338

  Shin, Won Ju ^a   Lee, Je Yun ^a   Kim, Jae Chang ^a   Yoon, Tae Hoon ^a   Kim, Tae Shick ^b   Song, Ok Keun ^b  

^a Pusan National University   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

Charge transfer complex; Interface; Metal oxide; OLED; Stability

Indexed keywords

CAPACITANCE; CHARGE TRANSFER; DOPING (ADDITIVES); INTERFACES (MATERIALS); ORGANIC LIGHT EMITTING DIODES (OLED); THICKNESS CONTROL;

HOLE TRANSPORTING LAYERS; INTERFACE PROPERTIES; MOLYBDENUM TRIOXIDES;

MOLYBDENUM COMPOUNDS;

EID: 41549086654     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2007.12.001     Document Type: Article

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