Extremely low voltage organic light-emitting diodes with p -doped alpha-sexithiophene hole transport and n -doped phenyldipyrenylphosphine oxide electron transport layers

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Matsushima, Toshinori ^a   Adachi, Chihaya ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); OHMIC CONTACTS;

ELECTRON TRANSPORT LAYERS; METAL/ORGANIC INTERFACES; ORGANIC LIGHT-EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 33845951342     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2410236     Document Type: Article

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