Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride

Journal of Applied Physics

Volumn 88, Issue 11, 2000, Pages 6598-6604

  Rokuta, E ^a   Hotta, Y ^a   Tabata, H ^a   Kobayashi, H ^a   Kawai, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000649150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1315614     Document Type: Article

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