Enhancement of memory window in the metal/ferroelectric (YMnO3)/insulator/semiconductor capacitor

IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 1998, Pages 39-42

  Lee, Ho Nyung ^a   Kim, Yong Tae ^a   Lee, Chang Woo ^a   Choh, Sung Ho ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTAL STRUCTURE; DATA STORAGE EQUIPMENT; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; FERROELECTRIC DEVICES; PLATINUM; SEMICONDUCTING SILICON; SILICA; THIN FILMS; YTTRIUM COMPOUNDS;

FERROELECTRIC CAPACITORS;

CAPACITORS;

EID: 0032276023     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)