Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

Journal of Physics D: Applied Physics

Volumn 36, Issue 17, 2003, Pages 2134-2140

  Parashar, S ^a   Raju, A R ^a   Rao, C N R ^a   Victor, P ^b   Krupanidhi, S B ^b  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; FILM GROWTH; HYSTERESIS; LEAKAGE CURRENTS; POLARIZATION; PYROLYSIS; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); THERMAL EFFECTS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; METAL-FERROELECTRIC-SEMICONDUCTOR CONFIGURATION; NEBULIZED SPRAY PYROLYSIS; POLARIZATION CHARGE;

YTTRIUM COMPOUNDS;

EID: 0141607260     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/17/317     Document Type: Article

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