Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages

  Khanna, Rohit ^a   Ip, K ^a   Allums, K K ^a   Baik, K ^a   Abernathy, C R ^a   Pearton, S J ^a   Heo, Y W ^a   Norton, D P ^a   Ren, F ^a   Dwivedi, R ^b   Fogarty, T N ^b   Wilkins, R ^b  

^a University of Florida   (United States)

^b PRAIRIE VIEW A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC RECTIFIERS; EVAPORATION; GALLIUM NITRIDE; HEAVY IONS; PROTON IRRADIATION; ZINC OXIDE;

BANDGAP; DEFECT GENERATION; REVERSE LEAKAGE CURRENT; SCHOTTKY RECTIFIERS;

SCHOTTKY BARRIER DIODES;

EID: 6344288942     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200409059     Document Type: Conference Paper

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