Implant isolation of ZnO

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2972-2976

  Kucheyev, S O ^a   Jagadish, C ^b   Williams, J S ^b   Deenapanray, P N K ^b   Yano, Mitsuaki ^c   Koike, Kazuto ^c   Sasa, Shigehiko ^c   Inoue, Masataka ^c   Ogata, Ken Ichi ^c  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ION BOMBARDMENT; ION IMPLANTATION; IRRADIATION; SINGLE CRYSTALS; THERMODYNAMIC STABILITY;

ELECTRICAL ISOLATION;

ZINC OXIDE;

EID: 0037352148     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542939     Document Type: Article

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