Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films

Chinese Physics Letters

Volumn 21, Issue 6, 2004, Pages 1143-1146

  Liu, Bo ^a   Song, Zhi Tang ^a   Feng, Song Lin ^a   Chen, Bomy ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ANTIMONY COMPOUNDS; CRYSTALLITES; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; MICROSTRUCTURE; TELLURIUM COMPOUNDS;

AFM; ANNEALING TEMPERATURES; EFFECT OF ANNEALING; ELEVATED TEMPERATURE; GRAINSIZE; MAJOR FACTORS; TEMPERATURE FORMATION; TEMPERATURE INCREASE;

SURFACE ROUGHNESS;

EID: 6344232879     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/6/046     Document Type: Article

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